3rd International Design and Test Workshop

IDT’08 Monastir, Tunisia December 20-22, 2008

 

 

 

IDT'08 Program Committe

 

The Program Committee consists of leading researchers in the fields of design and testing from all over the world.

PROGRAM CO-CHAIRS

Loulou M. – University of Sfax, Tunisia

Salem  A. – Egypt

Ivanov  A. – Canada

VICE-PROGRAM CO-CHAIRS

Alhumaidi S. - KSA

Besbes K. -Tunisia

Ben Saoud S.  -Tunisia

MEMBERS

A.J Al-Yamani A. 

KFUPM, KSA

Abd-El-Barr M. 

Kuwait University,Kuwait

Abdelkrim O.

CDTA, Algeria

Abraham  J. A.

UT at Austin, USA

Adham S.

LogicVision, USA

Akil M. 

ESIEE, France

AL Hammadi H. 

Etisalat, UAE

Al-Ars Z.

Delft University, Netherlands

Al-Failakawi M. 

Kuwait University, Kuwait

Al-Hashimi B. 

University of Southampton,UK

Aloul F.

AUS, UAE

Arabi K. 

PMC Sierra, USA

Ashraf S.

Ain Chams University

Auguin M. 

I3S, France

Bastaki E. 

Dubai Silicon Oasis, UAE

Beiu V. 

UAE University, UAE

Borrione D.

TIMA Laboratory, France

Chehab A.

AUB, Lebanon

Courtois B.

CMP, France

Daniel P.

ENSEA, France

De Micheli G.

EPFL,Switzerland

Deforges O. 

INSA Rennes, France

Dekeyser J-L

LIFL, France

ElAyat K.

AUC, Egypt

Eleuldj M.

EMI, Maroc

ElHennawy H. 

Ain Shams University, Egypt

Elmostapha  A.

Montreal University, Canada

Elsimary H.

ERI, Egypt

Fikry H. 

UFE, Egypt

Gamal M-A.

SECC, Egypt

Ghazel A.

SUPCOM, Tunisia

Ghonaimy A.

Ain Shams University, Egypt

Gogniat G.

UBS, France

Goren S. 

Bahcesehir University, Turkey

Granado B.

ENSEA, France

H. El-Maleh A. 

KFUPM, KSA

Habib S. 

Cairo University, Egypt

Hafed M. 

DFT Microsystems, Canada

Hamdioui S.

Delft University, Netherlands

Hammami O.

ENSTA, France

Hasnaoui S.

ENIT, Tunisia

Hayes J-P.

Michigan University, USA

Ismail M.

Analog VLSI Lab, USA

Ismail Y.

Northwestern University, USA

Ivanov A.

UBC, Canada

Kammoun L.

ENIS, Tunisia

Kanoun O.

ETIT, Germany

Keezer D.

Georgia Tech, USA

Khalgui M. 

MLU, Germany

Koubaa A.

IMAMU, KSA

Kurdahi F.

UCI, USA

Laroussi B.

ST Microelectronics, France

Loumeau  P.

ENST, France

Makki R.

UAE University, UAE

Masmoudi N.

ENIS, Tunisia

Massoud Y.

Rice University, USA

Mehrez H. 

LIP6, France 

Mirabbasi S.

UBC, Canada

Mohammed A. Z.

ERI, Egypt

Mouine J.

ENIT, Tunisia

Mourad S.

Santa Clara University, USA

Niar S.

LAMIH, France

Nourani M.

UTD, USA

Obeid A. M. 

KACST, KSA

Paindavoine M. 

LE2I, France

Pedram M.

SCU, USA

Philippe Diguet J.

UBS, France

Piguet C.

CSEM, Belgique

Ravikumar C.P.

Texas Instruments, India

Reda S. 

Brown University, USA

Robbana R.

EPT, Tunisia

Roy K.

Purdue University, USA

Sabry N.

UFC, Egypt

Samet A.

University of Carthage, Tunisia

Sellami Masmoudi D. 

ENIS, Tunisia

Sentiyes O.

IRISA, France

Simonot-Lion F.

LORIA, France

Slama I.

ENIT, Tunisia

Slamani M.

IBM, USA

Tahar S.

Concordia University, Canada

Tantawy A. N.

IBM, USA

Tehranipoor M.  

Connecticut University, USA

Tovar E.

IPP, Portogal

Valderrama C.

Faculty of Engineering – Belgium

Williams T. 

Synopsys, USA

Wunderlich H-J.

Stuttgart University, Germany

XU Q.

CUHK,  Hong Kong

Youssef H.

Sousse University, Tunisia

Zilic Z.

McGill University, Canada